Daniele Ielmini is a Professor at the Dipartimento di Elettronica, Informazione e Bioingegneria, Politecnico di Milano, Italy.

He received the Laurea (with merit) and Ph.D. in Nuclear Engineering from Politecnico di Milano in 1995 and 2000, respectively. He held visiting positions at Intel Corporation (2006), Stanford University (2006), and the University of Illinois at Urbana-Champaign (2010).

His research interests include the modeling and characterization of non-volatile memories, such as nanocrystal memory, charge trap memory, phase change memory (PCM), resistive switching memory (RRAM), and spin-transfer torque magnetic memory (STT-MRAM).

In 2016, he coedited the book ‘Resistive switching – from fundamental redox-processes to device applications’ for Wiley-VCH. He authored/coauthored 15 book chapters, more than 300 papers published in international journals and presented at international conferences, and 8 patents. His works received more than 10,000 citations, with an H-index of 69 (Scopus, September 2023). He has served in several Technical Subcommittees of international conferences, such as IEEE-IEDM (2008-2009, 2017-2018), IEEE-IRPS (2006-2008), IEEE-SISC (2008-2010), INFOS (2011-2017) and IEEE-ISCAS (2016-2019). He is Associate Editor of IEEE Trans. Nanotechnology and Semiconductor Science and Technology (IOP). He received the Intel Outstanding Researcher Award in 2013, the ERC Consolidator Grant in 2014, and the IEEE-EDS Paul Rappaport Award in 2015. He is a Fellow of the IEEE.